| 发明名称 |
Non-volatile memory saving cell information in a non-volatile memory array |
| 摘要 |
Systems and methods for saving repair cell address information in a non-volatile magnetoresistive random access memory (MRAM) having an array of MRAM cells are disclosed. A memory access circuit is coupled to the MRAM, and is configured to store failed cell address information in the MRAM. |
| 申请公布号 |
US8638596(B2) |
申请公布日期 |
2014.01.28 |
| 申请号 |
US201113189784 |
申请日期 |
2011.07.25 |
| 申请人 |
KIM JUNG PILL;KIM TAEHYUN;RAO HARI M.;QUALCOMM INCORPORATED |
发明人 |
KIM JUNG PILL;KIM TAEHYUN;RAO HARI M. |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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