| 摘要 |
PROBLEM TO BE SOLVED: To ensure solder bondability in a high-temperature environment while relaxing thermal stress applied to a semiconductor chip in a semiconductor device in which a lead frame and a semiconductor chip are solder bonded.SOLUTION: The semiconductor device comprises: an aluminum member 30 composed of aluminum between a lead frame 10 and a semiconductor element 20; metal layers 41, 42 each composed of metal other than aluminum and which are provided a first opposed surface 31 and a second opposed surface 32 of the aluminum member 30, respectively; a first alloy layer 51 composed of an alloy of metal which composes the metal layer 41 and a solder component between the metal layer 41 on the first opposed surface 31 and the lead frame 10; and a second alloy layer 52 composed of an alloy of metal which composes the metal layer 42 on the second opposed surface 32 and the solder component between the metal layer 42 on the second opposed surface and the semiconductor element 20. Each of the first alloy layer 51 and the second alloy layer 52 is composed of the alloy having a melting point higher than a melting point of the contained solder component. |
