发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which causes less influence on processing accuracy when performing mechanical or chemical treatment on a processing member, and which can temporarily support the processing member reliably and easily and easily release the temporary support of the processing member without causing a damage on the processing member.SOLUTION: The semiconductor device manufacturing method comprises the steps of: forming a high adhesion region and a low adhesion region in an adhesive layer 11 of an adhesive support medium 100 having a substrate 12 and the adhesive layer 11 with adhesion increased or decreased by irradiation of active light beams or radial rays 50, by performing pattern exposure on the adhesive layer; adhering a first surface of a processing member to the adhesive layer of the adhesive support medium; performing a mechanical or chemical treatment on a second surface of the processing member different from the first surface to obtain a processed member; and detaching the adhesive support medium from the first surface of the processed member.
申请公布号 JP2014017462(A) 申请公布日期 2014.01.30
申请号 JP20120232417 申请日期 2012.10.19
申请人 FUJIFILM CORP 发明人 TAN SHIRO;FUJIMAKI KAZUHIRO;NAKAMURA ATSUSHI;IWAI HISASHI;KOYAMA ICHIRO
分类号 H01L21/304;H01L21/02 主分类号 H01L21/304
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