发明名称 |
Coated stoichiometric silicon carbide |
摘要 |
The invention relates to a surface treatment for stoichiometric silicon carbide. A carbon-rich silicon carbide layer is applied over the silicon carbide. In the case of the silicon carbide surface, the ratio of silicon to carbon in the carbon-rich layer varies from one at the silicon carbide interface to near zero in the interior of the carbon-rich layer to greater than zero and preferably 0.3 to 0.5 on the surface of the carbon-rich layer remote from the interface. A preferred method of making the silicon carbide layer is also presented.
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申请公布号 |
US4340636(A) |
申请公布日期 |
1982.07.20 |
申请号 |
US19800173773 |
申请日期 |
1980.07.30 |
申请人 |
AVCO CORPORATION |
发明人 |
DEBOLT, HAROLD E.;SUPLINSKAS, RAYMOND J.;CORNIE, JAMES A.;HENZE, THOMAS W.;HAUZE, ALBERT W. |
分类号 |
C04B41/87;C04B41/45;C04B41/81;C04B41/89;C22C47/00;C22C47/02;C22C47/04;C22C47/06;C23C16/32;D01F9/10;H05B6/78;(IPC1-7):B32B7/02;B32B9/00 |
主分类号 |
C04B41/87 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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