| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can stably operate even at a temperature equal to or higher than a joining temperature of a semiconductor element and easily reduces thermal resistance, and a method of manufacturing the same.SOLUTION: The semiconductor device has a semiconductor element 20, a mounting member 50, and a junction metal layer. The semiconductor element has a back metal layer on a back surface thereof. The mounting member has a wiring layer 26 provided with a recess having a planar size larger than that of the semiconductor element. The junction metal layer joins the back metal layer of the semiconductor element and at least the bottom surface of the recess together. The junction metal layer contains a solid solution comprising at least one metal selected from a first group consisting of Cu, Au, Ag, Pd, and Pt and at least one metal selected from a second group consisting of Sn, Zn, and In. |
