| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device having an element isolation region.SOLUTION: A semiconductor device manufacturing method comprises implanting an impurity into a top face of a semiconductor substrate SB to form an impurity introduction layer IN1 in order to prevent growth of crystal defects occurring at an end of a top face of an active region adjacent to an element isolation region EI. At this time, when the impurity is perpendicularly implanted with respect to a principal surface of the semiconductor substrate SB, by implanting the impurity after exposing the top face at the end of the active region from a silicon nitride film using as a mask, the impurity introduction layer IN1 is formed at the end of the active region. |
