发明名称 ABNORMALITY DETECTION METHOD FOR SEMICONDUCTOR SWITCHING ELEMENT AND ABNORMALITY DETECTION APPARATUS FOR SEMICONDUCTOR SWITCHING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an abnormality detection method for a semiconductor switching element, capable of detecting abnormalities without thermally affecting the semiconductor switching element and peripheral components.SOLUTION: The abnormality detection method for a semiconductor switching element includes, when turning ON a semiconductor switching element 2 electrically connecting and disconnecting a power source 1 and a load 4, the steps of: firstly detecting a power source voltage Vby a power source voltage detection part 3b; setting allowable time for turning ON tset which is a time not exceeding permissible calorific value P of the semiconductor switching element 2 when the power source voltage Vis applied; turning on the semiconductor switching element 2 only within the allowable time for turning ON tset continuously, and in the meantime detecting a load voltage Vld by a load voltage detection part 3c; and determining that the semiconductor switching element 2 is abnormal based on whether or not the detected load voltage Vld is a normal value.
申请公布号 JP2014052286(A) 申请公布日期 2014.03.20
申请号 JP20120197004 申请日期 2012.09.07
申请人 NISSAN MOTOR CO LTD 发明人 TERANISHI KEN
分类号 G01R31/26;H02M1/00 主分类号 G01R31/26
代理机构 代理人
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