| 摘要 |
The present invention relates to a manufacturing method for graphene. The manufacturing method for graphene is able to uniformly grow graphene at low temperatures without a catalyst by forming a graphene layer with a method which directly grows graphene on a substrate by supplying process gas containing carbon sources to the substrate after preprocessing the substrate by oxidative gas plasma. The manufacturing method is able to directly grow graphene on a flexible substrate without a catalyst, thereby being able to be applied to various flexible devices such as a flexible display recently receiving attention. The manufacturing method for graphene forms a mask pattern on a substrate after or before preprocessing the substrate by using oxidative gas plasma, grows graphene on the surface of the substrate exposed due to the mask by supplying process gas containing carbon sources to the substrate, and forms a graphene layer equipped with the pattern, thereby being able to easily and simply form the graphene layer equipped with the pattern by using a mask made of various materials with one step process without an additional lithographic process. [Reference numerals] (AA) Oxidative gas plasma |
