| 摘要 |
<p>To provide a vacuum processing device (100) capable of reducing a decline in processing throughput, said vacuum processing device (100) is provided with multiple vacuum transport chambers (41) (42) and a lock chamber (31), and transports and performs processing on a wafer to be processed. Said vacuum transport chambers (41) (42): are placed behind an atmosphere transport chamber (21); transport the wafer to be processed therein; and have connected to the perimeter thereof, vacuum processing chambers (61) (62) (63) that use a plasma to process the wafer to be processed. Said lock chamber (31) is placed between an intermediate chamber (32) and the rear surface of the atmosphere transport chamber (21). While being transported between said vacuum transport chambers (41) (42), the wafer to be processed is placed in and stored by said intermediate chamber (32). To one of the multiple vacuum processing chambers (61) (62) (63), by way of the lock chamber (31), said vacuum processing device (100) transports said wafer to be processed, which is stored in a cassette placed on a cassette stand, and processes said wafer to be processed. In the vacuum processing device (100), a dummy wafer storage section is placed within the intermediate chamber (32). Said dummy wafer storage section is placed within a processing chamber (61) (62) (63) when the plasma is formed in the processing chamber (61) (62) (63) and processing is done by the processing chamber (61) (62) (63) using a dummy wafer and a different condition from the first-mentioned processing.</p> |
