| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing the contact area between a source region and a contact plug. SOLUTION: The source region 9 is formed at the surface layer section of an epitaxial layer 3. A groove 11 is formed so as to be recessed from the surface on the source region 9. An insulation film 12 is stacked on the epitaxial layer 3. In the insulation film 12, a contact hole 13 is formed at a position opposing at least the groove 11 while passing through in a layer thickness direction. The contact plug 15 is buried in the contact hole 13. The bottom section of the contact plug 15 is inserted into the groove 11 and is in contact with the source region 9. More specifically, the contact plug 15 is in contact with not only the surface of the source region 9, but also the bottom and side surfaces of the groove 11 formed in the source region 9. COPYRIGHT: (C)2010,JPO&INPIT |
