SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a high withstand voltage and low on-resistance.SOLUTION: A first portion 31a of a silicon carbide substrate 39 to which a first-conductivity-type impurity is added is disposed deeper than a first depth position. A second portion 31b is disposed from the first depth position to a second depth position shallower than the first depth position. A third portion 31c is disposed from the second depth position to a primary surface P2. The second impurity concentration included in the second portion 31b is higher than the first impurity concentration included in the first portion 31a. The third impurity concentration included in the third portion 31c is more than or equal to the first impurity concentration and less than the second impurity concentration. A body region 32 to which a second-conductivity-type impurity is added has a concentration peak of the impurity at a position shallower than the first depth position and deeper than the second depth position.