| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor wafer by which guide grooves for accurate cleavage can be formed in the semiconductor wafer with efficiency. SOLUTION: The method of manufacturing the semiconductor wafer includes a first groove forming process of forming first groove 404 in an upper portion of a substrate 103 formed of crystals, a functional semiconductor crystal layer forming process of forming a functional semiconductor crystal layer 104 by selectively growing semiconductor crystals on the substrate 103 at positions other than formation positions of the first grooves 404 after the first groove forming process, and a second groove forming process of forming second grooves 102 reaching the inside of the substrate 103 from an upper surface of the functional semiconductor crystal layer 104 by expanding the first grooves by dry-etching the functional semiconductor layer 104 and substrate 103 at peripheries of the formation positions of the first grooves 404 after the functional semiconductor crystal layer forming process. COPYRIGHT: (C)2011,JPO&INPIT |
