发明名称 |
SILICON WAFER AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.</p> |
申请公布号 |
KR20140046420(A) |
申请公布日期 |
2014.04.18 |
申请号 |
KR20137033445 |
申请日期 |
2012.05.14 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
FUSEGAWA IZUMI;HOSHI RYOJI;SONOKAWA SUSUMU;SAITO HISAYUKI |
分类号 |
H01L21/322;C30B29/06;C30B33/02 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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