发明名称 PRINTABLE ETCHING MEDIA FOR SILICON DIOXIDE AND SILICON NITRIDE LAYERS
摘要 The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media which are suitable both for the etching of inorganic layers and also for the doping of underlying layers. In particular, they are corresponding particle-containing compositions by means of which extremely fine structures can be etched very selectively without damaging or attacking adjacent areas.
申请公布号 KR101387260(B1) 申请公布日期 2014.04.18
申请号 KR20087003749 申请日期 2006.06.21
申请人 发明人
分类号 C03C15/00 主分类号 C03C15/00
代理机构 代理人
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