发明名称 |
Lateral double diffused metal oxide semiconductor device and method of manufacturing the same |
摘要 |
An LDMOS device includes a gate which is formed on and/over over a substrate; a source and a drain which are arranged to be separated from each other on both sides of the substrate with the gate interposed therebetween; and a field oxide film formed to have a step between the gate and the drain. The LDMOS device further includes a drift region formed of first conduction type impurity ions between the gate and the drain in the substrate; and at least one internal field ring formed in the drift region by selectively implanting a second conduction type impurity in accordance with the step of the field oxide film. |
申请公布号 |
US8710587(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201113275603 |
申请日期 |
2011.10.18 |
申请人 |
MOON NAM-CHIL;YOO JAE-HYUN;KIM JONG-MIN;DONGBU HITEK CO., LTD. |
发明人 |
MOON NAM-CHIL;YOO JAE-HYUN;KIM JONG-MIN |
分类号 |
H01L29/78;H01L21/336;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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