SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
摘要
<p>Provided are a semiconductor device and a manufacturing method of the semiconductor device. The manufacturing device of the semiconductor device comprises laminating a high-dielectric material film without silicon and an insulating film containing silicon on a substrate; thermally treating the substrate on which the high-dielectric material film and the insulating film are laminated; and diffusing the silicon contained in the insulating film to the high-dielectric material film.</p>
