| 摘要 |
PROBLEM TO BE SOLVED: To prevent a crystal yield rate from lowering by suppressing first dislocation generation in a latter-half part of crystal formation.SOLUTION: A single crystal pulling apparatus comprises: a susceptor 2 which houses a crucible 3, is mounted as rotatable around a vertical axis and is moved upward as a silicon single crystal C is pulled upward; susceptor raising and lowering means to support the susceptor as movable up and down; and a heat shielding ring 10 which is formed as annular along the circumferential direction of the susceptor in the circumference of the susceptor and is mounted as movable up and down. The heat shielding ring can be positioned between the bottom of the crucible and the side heater by going up and down. |
