Selective Growth of Compound Semiconductors,申请号KR20120045289-传众专利搜索

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发明名称	Selective Growth of Compound Semiconductors
摘要	<p>본 발명은 화합물반도체 선택적 결정 성장 방법으로서, 금속 촉매를 이용한 MOVPE 결정 성장 방법에 의해 나노 육각피라미드 형태의 질화물 반도체 꼭대기 부분에서만 선택적 결정 성장이 가능하도록 하는 공정 기술과 결정성장 기술에 관한 것이다.</p>
申请公布号	KR101392999(B1)	申请公布日期	2014.05.09
申请号	KR20120045289	申请日期	2012.04.30
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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