ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS, AND ION IMPLANTATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a method and system for decreasing deposition of residues on a heated cathode of an ion implantation system or reducing decrease of the heated cathode due to etching.SOLUTION: A method comprises: monitoring cathode bias power in an ion implantation system; comparing the power usage of a bias source to initial power; and etching an indirectly heated cathode if the power usage at a predetermined time is higher than the initial power, and regrowing the indirectly heated cathode if the power usage at the predetermined time is lower than the initial power, where a fluorinated gas is used in the regrowing.