| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an error correction circuit, a memory device, and an error correction method which can perform error correction at high-speed and suppress an increase in structure and/or power consumption of the error correction circuit. <P>SOLUTION: An error correction circuit comprises: input means 153 for inputting an odd number of pieces of redundant binary information in current values; conversion means 151 for converting the sum of the odd number of current values input via the input means into voltage; and first determination means 152 for outputting binary information according to whether the voltage output by the conversion means is equal to or more than a first preset threshold. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
