| 摘要 |
PROBLEM TO BE SOLVED: To obtain an intended etching amount with high accuracy.SOLUTION: A semiconductor device manufacturing method comprises performing patterning on an etching surface of a silicon wafer 10 along a (110) plane to form an etching mask 11 and opening an etching opening 11a and a monitoring opening 11b, in which a width of the monitoring opening 11b is set at √2 times an etching amount h of the etching opening 11a; and subsequently, impregnating the silicon wafer 10 with a wet anisotropic etching solution and etching the silicon wafer 10 and projecting light of a wavelength reflected by a groove formed in the monitoring opening 11b. When the etching advances, the groove formed in the monitoring opening 11b becomes V-shaped. And when the etching is terminated based on a signal intensity of reflected light at the time of becoming V-shaped, a grove of an intended etching amount can be formed in the etching opening 11a. |
