| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonsilicon semiconductor thin film to be used in a thin film transistor and a sputtering target to form the same, and to provide a thin film transistor having a new nonsilicon semiconductor thin film.SOLUTION: An oxide sintered body for a sputtering target is characterized by having gallium solid-dissolved in indium oxide, an atomic ratio Ga/(Ga+In) of 0.001-0.12, a percentage content of Indium and Gallium relative to total metal atoms of 80 atom% or higher, a bixbyite structure of InO, a density of 6.5-7.1 g/cm, and a bulk resistance of 10 m&OHgr;cm or lower, and being added with one or two or more oxides selected from yttrium oxide, scandium oxide, aluminum oxide, and boron oxide, wherein the aluminum oxide of 0.01 atom% or more in terms of a metal atom is added when the aluminum oxide is added. |
