| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device with thin interlayer insulating films.SOLUTION: A memory cell array 11 extends in a first direction parallel to a substrate 20 as a longitudinal direction, and includes a plurality of first conductive layers 42a-42d, which are laminated in a direction vertical to the substrate and function as first wiring. The interlayer insulating layers 41a-41d are provided between the plurality of first conductive layers. A variable resistance layer 45 is continuously formed on side surfaces of the plurality of first conductive layers and the interlayer insulating layers and functions as a variable resistance element. A columnar conductive layer 43 is provided on side surfaces of the first conductive layers and the interlayer insulating layers via the variable resistance layer 45, extends in the vertical direction as a longitudinal direction, and functions as second wiring. A first side surface, which is a side surface of the first conductive layer, recedes when viewed from the side of the columnar conductive layer, compared to a second side surface, which is a side surface of the interlayer insulating layer. The variable resistance layer 45 is continuously formed along the first side surface and the second side surface, and has a convex shape on the second side surface. |
