| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce adverse effect of a raised part formed in a semiconductor film by overlap irradiation of pulse laser.SOLUTION: In a laser processing method for forming a crystal semiconductor film on a non-single crystal semiconductor film by performing overlap irradiation at a predetermined scanning pitch, while scanning with pulse laser having a predetermined beam cross section shape, overlap irradiation with pulse laser is performed while setting the scanning pitch in a range satisfying a formula 0.75b≥p≥0.25b, where b is the length in the scanning direction on the bottom of a raised part formed on the rear end side in the scanning direction of a pulse laser beam, on a semiconductor film irradiated with pulse laser, and p is the scanning pitch. Consequently, the raised parts are formed closely with each other and difference in height is reduced thus reducing uneven irradiation.</p> |
