| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure capable of suppressing deterioration of electric characteristics, which becomes remarkable along with miniaturization, and to provide a reliable semiconductor device.SOLUTION: The semiconductor device has a first gate electrode layer, a second gate electrode layer, and a third gate electrode layer. The first gate electrode layer, the second gate electrode layer, and the third gate electrode layer are apart from each other. The first gate electrode layer overlaps with an oxide semiconductor layer. The second gate electrode layer covers a part of one end, in the direction of channel width, of the oxide semiconductor layer. The third gate electrode layer covers a part of the other end, in the direction of channel width, of the oxide semiconductor layer.</p> |
