发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces an area of a relay logic region to a further degree without decreasing an area of a logic cell existing in a relay region.SOLUTION: A semiconductor device comprises a semiconductor substrate SB, a central region COR, an outside region IOR and a relay region ITR. The relay region ITR includes a first relay region ITL which has a semiconductor element capable of being applied with a first voltage, and a second relay region ITH which is adjacent to the first relay region ITL and has a semiconductor element capable of being applied with a second voltage higher than the first voltage, in which the relay regions are partitioned by a boundary BDR. The boundary BDR extends along a direction where the first and second relay regions ITL, ITH extend and has at least one bent part BTL, BTH which projects on either one of the side where the first relay region ITL exists or the side where the second relay region ITH exist.
申请公布号 JP2014103346(A) 申请公布日期 2014.06.05
申请号 JP20120256039 申请日期 2012.11.22
申请人 RENESAS ELECTRONICS CORP 发明人 TSURUME KEIJI;OKUMA HARUYUKI;HISAMURA KAZUNORI;MORINAGA TATSUYA
分类号 H01L21/82;H01L21/822;H01L27/04 主分类号 H01L21/82
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