LATERAL BIPOLAR TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To disclose a lateral bipolar transistor which can inhibit decrease in a current gain while improving a withstand voltage.SOLUTION: A lateral bipolar transistor 10 comprises: an n-type semiconductor layer 16; a p-type emitter region 40 provided on a part of a surface of the semiconductor layer 16; a p-type collector region 20 which is provided at a part of the surface of the semiconductor layer 16 and arranged at a distance from the emitter region 40; and an n-type base region 30 which is provided at a part of the surface of the semiconductor layer 16 and arranged between the emitter region 40 and the collector region 20. The emitter region 40, the collector region 20 and the base region 30 are isolated from each other by the semiconductor layer 16. The lateral bipolar transistor further comprises a p-type first buried region 50 in the semiconductor layer 16 and under the base region 30 in a depth direction from the surface of the semiconductor layer 16, in which a charge amount of the first buried region 50 is equal to a charge amount of the base region 30.