| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide: a method of producing a silicon carbide single crystal from which a silicon carbide single crystal substrate having little basal-plane dislocation and excellent in crystallinity can be obtained; a silicon carbide single crystal ingot thus obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot. <P>SOLUTION: This invention relates to: the method of producing the high-quality silicon carbide single crystal that has little basal-plane dislocation, wherein the basal-plane dislocation is reduced by structurally converting the basal-plane dislocation into a threading edge dislocation during the crystal growing through a sublimation recyrstallization method; the silicon carbide single crystal ingot obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
