| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, capable of achieving a small cell size by a simple process.SOLUTION: Provided is a semiconductor device 1 including: a semiconductor substrate 5; a trench 6 dividing the semiconductor substrate 5 into a plurality of active regions 10; an embedded insulating film 7 embedded in the trench 6 so as to have a protrusion part 9 protruding above a surface of the semiconductor substrate 5, and having an aspect ratio of 2.3-3.67; a ptype source region 13 and a ptype drain region 14 that are a pair of regions formed and spaced apart along a longitudinal direction of the trench 6 in the active regions 10, and providing an n-type channel region 15 in a region therebetween; and a floating gate 11 consisted of a single layer spanning over the ptype source region 13 and the ptype drain region 14, and formed to protrude above the protrusion part 9 so as not to be overlapped with the protrusion part 9. |
