| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a semiconductor device.SOLUTION: A semiconductor device has a buffer layer BU formed above a substrate S; a channel layer CH and a barrier layer BA; a groove T which reaches an intermediate part of the channel layer CH; a gate electrode GE disposed in the groove T through an insulation film GI; and a drain electrode DE and a source electrode SE on the barrier layers BA on both sides of the gate electrode GE. The gate insulation GI has a first part which extends from an end portion of the groove T to the drain electrode DE side and is positioned on the end portion side of the groove T; and a second part which is positioned on the drain electrode DE side rather than the first part, and has film thickness larger than that of the first part. The first part is made from a single layer film of an insulation film IF2, and the second part is made from a laminated film of an insulation film IF1 and the insulation film IF2. Therefore, the film thickness of the first part is decreased at the end portion on the drain electrode DE side of the groove T, thereby reducing on-resistance. |
