| 摘要 |
PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor laser which, even when the oscillation wavelength is shortened by plasma effects till an oscillation threshold current or extended by a temperature rise after oscillation, can obtain stable and excellent single mode oscillation, with an active region Bragg mode never getting out of the effective reflection band of a distribution reflector region. SOLUTION: The semiconductor laser includes an active region 1 having a first diffraction lattice 11 and a distribution reflector region 2 having a second diffraction lattice 12. The second diffraction lattice 12 includes a first portion 12A whose optical path changes according to the wavelength of light propagating from the first diffraction lattice 11 and a second portion 12B which has, for example, arc shaped lattices, each of which having a lattice period matched to the wavelength of light incident from the first portion 12A. COPYRIGHT: (C)2012,JPO&INPIT |
