发明名称 高密度ワイドリボンイオンビーム生成のための小型プラズマソース
摘要 An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
申请公布号 JP5645178(B2) 申请公布日期 2014.12.24
申请号 JP20130508105 申请日期 2011.04.21
申请人 发明人
分类号 H01J27/16;H05H1/46 主分类号 H01J27/16
代理机构 代理人
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