FLATBAND SHIFT FOR IMPROVED TRANSISTOR PERFORMANCE

摘要

An integrated circuit includes MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. An integrated circuit includes MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and DEMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the DEMOS transistor gate overlying the DEMOS transistor channel. A method of forming an integrated circuit with MOS and LDMOS transistors with at least one of indium, carbon, nitrogen, and a halogen dopant raising the threshold voltage of a portion of the LDMOS transistor gate overlying the DEMOS transistor channel.

主权项

1. A process for forming an integrated circuit, comprising the steps:
forming a first polysilicon gate of a MOS transistor; forming an extended drain of a DEMOS transistor; forming a second polysilicon gate of said DEMOS transistor where a portion of said second polysilicon gate overlies an edge of said extended drain; forming a source and drain extension photoresist pattern that opens a source side and drain side of said MOS transistor and opens a source side of said DEMOS transistor and opens a major portion of said second polysilicon gate that overlies a channel of said DEMOS transistor but covers a drain side of said DEMOS transistor; and implanting said first polysilicon gate and said major portion with at least one dopant selected from the group indium, carbon, nitrogen, and halogen that raises a threshold voltage of said DEMOS transistor.