METHOD FOR FABRICATING AN INTEGRATED DEVICE

摘要

A method for fabricating an integrated device includes the following steps. First, a multi-layered structure is formed on a substrate, wherein the multi-layered structure is embedded in a lower isolation layer. Then, a bottom conductive pattern and a top conductive pattern are formed on a top surface of the lower isolation layer, wherein the top conductive pattern is on a top surface of the bottom conductive pattern. Afterwards, portions of the top conductive pattern are removed to expose portions of the bottom conductive pattern. Subsequently, an upper isolation layer is deposited on the lower isolation layer so that the upper isolation layer can be in direct contact with the portions of the bottom conductive pattern. Finally, portions of the lower isolation layer and the upper isolation layer are removed so as to expose portions of the substrate.

主权项

1. A method for fabricating an integrated device, comprising:
providing a multi-layered structure on a substrate, wherein the multi-layered structure is embedded in a lower isolation layer; forming an upper conductive pattern on a top surface of the lower isolation layer, wherein the upper conductive pattern comprises a bottom conductive pattern and a top conductive pattern disposed on a top surface of the bottom conductive pattern; removing portions of the top conductive pattern to expose portions of the bottom conductive pattern; blank forming an upper isolation layer on the lower isolation layer, wherein the upper isolation layer is in direct contact with the portions of the bottom conductive pattern; and removing portions of the lower isolation layer and the upper isolation layer to expose portions of the substrate.