发明名称 3D NAND STAIRCASE CD CONTROL BY USING INTERFEROMETRIC ENDPOINT DETECTION
摘要 Embodiments of the present disclosure provide methods for forming stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips using precise photoresist trimming process endpoint control. In one example, a method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer, collecting a return reflected optical signal reflected from the photoresist layer, and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.
申请公布号 US2015011027(A1) 申请公布日期 2015.01.08
申请号 US201414326442 申请日期 2014.07.08
申请人 Applied Materials, Inc. 发明人 LIAN Lei
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method of determining a photoresist trimming endpoint for forming stair-like structures on a substrate, comprising: performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process; directing an optical signal to a surface of the patterned photoresist layer while trimming the patterned photoresist layer; collecting a return reflected optical signal reflected from the photoresist layer; and determining a trimming endpoint by analyzing the return optical signal reflected from the photoresist layer.
地址 Santa Clara CA US