| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce power loss in a simple composition.SOLUTION: A semiconductor device comprises a semiconductor element which includes: a nitride-based semiconductor layer including a first semiconductor layer which is formed on a substrate and composed of a nitride-based semiconductor, and a second semiconductor layer which is formed on a surface of the first semiconductor layer and has band gap wider than that of the first semiconductor layer; a first electrode and a second electrode which are formed on the second semiconductor layer; an equipotential region formed closer to the substrate than the first semiconductor layer or formed in the substrate; and a passive circuit part which is connected between the first electrode and the equipotential region and includes an electric resistance part and an electrostatic capacitance part. The passive circuit is composed in a manner such that the equipotential region becomes positive potential with respect to the second electrode when a voltage applied to between the first electrode and the second electrode is switched from a backward voltage to a forward voltage.</p> |
