发明名称 Semiconductor Device and Method of Forming Through Mold Hole with Alignment and Dimension Control
摘要 A semiconductor device includes a semiconductor die and an encapsulant formed over a first surface of the semiconductor die and around the semiconductor die. A first insulating layer is formed over a second surface of the semiconductor die opposite the first surface. A plurality of conductive vias is formed through the first insulating layer. A conductive pad is formed over the encapsulant. An interconnect structure is formed over the semiconductor die and encapsulant. A first opening is formed in the encapsulant to expose the conductive vias. The conductive vias form a conductive via array. The conductive via array is inspected through the first opening to measure a dimension of the first opening and determine a position of the first opening. The semiconductor device is adjusted based on a position of the conductive via array. A conductive material is formed in the first opening over the conductive via array.
申请公布号 US2015028471(A1) 申请公布日期 2015.01.29
申请号 US201313950122 申请日期 2013.07.24
申请人 STATS ChipPAC, Ltd. 发明人 Lin Yaojian;Chen Kang;Gu Yu
分类号 H01L23/498;H01L21/66 主分类号 H01L23/498
代理机构 代理人
主权项 1. A method of making a semiconductor device, comprising: providing a semiconductor die; depositing an encapsulant over a first surface of the semiconductor die and around the semiconductor die; forming a first insulating layer over a second surface of the semiconductor die opposite the first surface; forming a plurality of conductive vias through the first insulating layer; and forming a first opening in the encapsulant to expose the conductive vias.
地址 Singapore SG