Semiconductor Device, a Semiconductor Wafer Structure, and a Method for Forming a Semiconductor Wafer Structure

摘要

Embodiments relate to a semiconductor device, a semiconductor wafer structure, and a method for manufacturing or forming a semiconductor wafer structure. The semiconductor device includes a semiconductor substrate with a first region having a first conductivity type and a second region having a second conductivity type. The semiconductor device further includes an oxide structure with interrupted areas and a metal layer structure being in contact with the second region at least at the interrupted areas of the oxide.

主权项

1. A semiconductor device, comprising
a semiconductor substrate with a first region having a first conductivity type and a second region having a second conductivity type, the second region comprising one or more sections of the second conductivity type; an oxide structure with interrupted areas; and a metal layer structure being in contact with the second region at least at the interrupted areas of the oxide, wherein a projection of the oxide structure onto the second region determines at least two interrupted areas, which are separated by portions of the oxide structure, in at least one of the one or more sections of the second region.