FINFET STRUCTURES HAVING SILICON GERMANIUM AND SILICON CHANNELS

摘要

Silicon and silicon germanium fins are formed on a semiconductor wafer or other substrate in a manner that facilitates production of closely spaced nFET and pFET devices. A patterned mandrel layer is employed for forming one or more recesses in the wafer prior to the epitaxial growth of a silicon germanium layer that fills the recess. Spacers are formed on the side walls of the patterned mandrel layer followed by removal of the mandrel layer. The exposed areas of the wafer and silicon germanium layer between the spacers are etched to form fins usable for nFET devices from the wafer and fins usable for pFET devices from the silicon germanium layer.

主权项

1. A method comprising:
forming a patterned mandrel layer on a semiconductor substrate, the patterned mandrel layer including mandrel portions having side walls; recessing one or more portions of the semiconductor substrate to form one or more trenches within the semiconductor substrate; epitaxially growing a silicon germanium layer within the one or more trenches; forming spacers on the side walls of the mandrel portions; removing the mandrel portions from the semiconductor substrate, and removing portions of the semiconductor substrate and the silicon germanium layer between the spacers, thereby forming a first plurality of parallel fins from the semiconductor substrate and a second plurality of parallel fins from the silicon germanium layer.