发明名称 |
MEMS DEVICE AND PROCESS FOR PRODUCING SAME |
摘要 |
There are provided a process for fabricating MEMS device that includes a plurality of through-holes capable being arranged at a high density, the through-holes having a tapered end portion. Through-holes having vertical side surfaces and tapered bottoms are provided by a processing method including the steps of: disposing quadrilateral patterning having desired dimensions on a silicon substrate having a flat surface of a crystal plane, etching the substrate to a desired depth by dry etching that can realize a high aspect ratio etching, and anisotropic wet etching the dry etched substrate with a KOH aqueous solution containing isopropyl alcohol mixed thereinto. |
申请公布号 |
US2015028438(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201214378102 |
申请日期 |
2012.03.30 |
申请人 |
Kanamaru Masatoshi;Aono Takanori;Suzuki Kengo |
发明人 |
Kanamaru Masatoshi;Aono Takanori;Suzuki Kengo |
分类号 |
B81B7/00;B81C1/00 |
主分类号 |
B81B7/00 |
代理机构 |
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代理人 |
|
主权项 |
1. A MEMS device having a structure comprising: one sheet of a semiconductor substrate having a first surface and a second surface; and vertical holes that are holes extending from the first surface into the semiconductor substrate, wherein the holes have a side surface extending from an opening of the first surface and being a substantially vertical surface, continuously forming an inclined plane from the vertical surface inside the holes while a diameter is reduced, and being open in the second surface with the inclined plane. |
地址 |
Tokyo JP |