发明名称 MEMS DEVICE AND PROCESS FOR PRODUCING SAME
摘要 There are provided a process for fabricating MEMS device that includes a plurality of through-holes capable being arranged at a high density, the through-holes having a tapered end portion. Through-holes having vertical side surfaces and tapered bottoms are provided by a processing method including the steps of: disposing quadrilateral patterning having desired dimensions on a silicon substrate having a flat surface of a crystal plane, etching the substrate to a desired depth by dry etching that can realize a high aspect ratio etching, and anisotropic wet etching the dry etched substrate with a KOH aqueous solution containing isopropyl alcohol mixed thereinto.
申请公布号 US2015028438(A1) 申请公布日期 2015.01.29
申请号 US201214378102 申请日期 2012.03.30
申请人 Kanamaru Masatoshi;Aono Takanori;Suzuki Kengo 发明人 Kanamaru Masatoshi;Aono Takanori;Suzuki Kengo
分类号 B81B7/00;B81C1/00 主分类号 B81B7/00
代理机构 代理人
主权项 1. A MEMS device having a structure comprising: one sheet of a semiconductor substrate having a first surface and a second surface; and vertical holes that are holes extending from the first surface into the semiconductor substrate, wherein the holes have a side surface extending from an opening of the first surface and being a substantially vertical surface, continuously forming an inclined plane from the vertical surface inside the holes while a diameter is reduced, and being open in the second surface with the inclined plane.
地址 Tokyo JP