SEMICONDUCTOR DEVICE,申请号US201414320211-传众专利搜索

发明名称	SEMICONDUCTOR DEVICE
摘要	A semiconductor device includes: a substrate; a gate electrode which is arranged on a first surface of the substrate and has a plurality of gate finger electrodes, a source electrode which is arranged on the first surface of the substrate and has a plurality of source finger electrodes, the source finger electrode is close to the gate finger electrode; a drain electrode which is arranged on the first surface of the substrate and has a plurality of drain finger electrodes, the drain finger electrode faces the source finger electrode via the gate finger electrode; and a shield plate electrode which is arranged on the drain finger electrode and the first surface of the substrate between the gate finger electrode and the drain finger electrode via an insulating layer, is short-circuited to the source finger electrode, and shields electrically the gate finger electrode and the drain finger electrode from each other.
申请公布号	US2015028427(A1)	申请公布日期	2015.01.29
申请号	US201414320211	申请日期	2014.06.30
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	YAMAMURA Takuji
分类号	H01L29/40;H01L29/78	主分类号	H01L29/40
代理机构		代理人
主权项	1. A semiconductor device, comprising: a substrate; a gate electrode which is arranged on a first surface of the substrate and has a plurality of gate finger electrodes, a source electrode which is arranged on the first surface of the substrate and has a plurality of source finger electrodes, the source finger electrode is close to the gate finger electrode; a drain electrode which is arranged on the first surface of the substrate and has a plurality of drain finger electrodes, the drain finger electrode faces the source finger electrode via the gate finger electrode; an insulating layer which covers the gate finger electrode, the substrate between the gate finger electrode and the source finger electrode, the substrate between the gate finger electrode and the drain finger electrode, at least a part of the source finger electrode, and at least a part of the drain finger electrode; and a shield plate electrode which is arranged over the drain finger electrode and the first surface of the substrate between the gate finger electrode and the drain finger electrode via the insulating layer, is short-circuited to the source finger electrode, and shields electrically the gate finger electrode and the drain finger electrode from each other.
地址	Tokyo JP