BURIED SIGE OXIDE FINFET SCHEME FOR DEVICE ENHANCEMENT

摘要

The present disclosure relates to a Fin field effect transistor (FinFET) device having a buried silicon germanium oxide structure configured to enhance performance of the FinFET device. In some embodiments, the FinFET device has a three-dimensional fin of semiconductor material protruding from a substrate at a position located between first and second isolation regions. A gate structure overlies the three-dimensional fin of semiconductor material. The gate structure controls the flow of charge carriers within the three-dimensional fin of semiconductor material. A buried silicon-germanium-oxide (SiGeOx) structure is disposed within the three-dimensional fin of semiconductor material at a position extending between the first and second isolation regions.

主权项

1. A Fin field effect transistor (FinFET) device, comprising:
a three-dimensional fin of semiconductor material protruding from a substrate at a location between first and second isolation regions; a gate structure overlying the three-dimensional fin of semiconductor material and configured to control a flow of charge carriers within the three-dimensional fin of semiconductor material; and a buried epitaxial oxide structure disposed within the three-dimensional fin of semiconductor material at a position extending between the first and second isolation regions.