| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device includes a first gate structure formed in a semiconductor substrate; a second gate structure formed over the semiconductor substrate and over the first gate structure; and a bit line formed in the semiconductor substrate, and formed below the first gate structure. |
| 申请公布号 |
US2015028411(A1) |
申请公布日期 |
2015.01.29 |
| 申请号 |
US201414178197 |
申请日期 |
2014.02.11 |
| 申请人 |
SK HYNIX INC. |
发明人 |
LEE Min Jin |
| 分类号 |
H01L29/78;H01L27/088 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first gate structure formed in a semiconductor substrate; a second gate structure formed over the semiconductor substrate and over the first gate structure; and a bit line formed in the semiconductor substrate, and formed below the first gate structure. |
| 地址 |
Icheon KR |
