SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS

摘要

In order to remove the particles attached to the wafer W, the distance between a front end of a nozzle unit 4 and the wafer W is set to be in a range of from about 10 mm to about 100 mm, a pressure within a cleaning chamber 31 is set to be an adequate level, and then, a gas cluster is irradiated to a surface of the wafer W. Therefore, the particles are rapidly removed with high efficiency. Further, since the gas cluster is vertically irradiated to the surface of the wafer W from the nozzle unit 4, damage of a recess pattern is suppressed. Furthermore, by supplying a mixed gas containing a carbon dioxide gas and a helium gas to the nozzle unit 4 and generating the gas cluster, the particles are removed with high efficiency.

主权项

1. A substrate cleaning method of removing particles attached to a substrate, the substrate cleaning method comprising:
providing the substrate to face a nozzle unit; generating a gas cluster as an aggregate of atoms or molecules of a cleaning gas through adiabatic expansion by discharging the cleaning gas to a processing gas atmosphere as a vacuum atmosphere through the nozzle unit from a region having a higher pressure than the processing gas atmosphere in which the substrate is provided; and removing the particles by vertically irradiating the gas cluster to a surface of the substrate; wherein, in the irradiating of the gas cluster, a distance between a front end of the nozzle unit and the substrate is in a range of from about 10 mm to about 100 mm.