发明名称 |
CHARGED PARTICLE LITHOGRAPHY SYSTEM AND BEAM GENERATOR |
摘要 |
The invention relates to a charged particle lithography system for exposing a target. The system includes a charged particle beam generator for generating a charged particle beam; an aperture array (6) for forming a plurality of beamlets from the charged particle beam; and a beamlet projector (12) for projecting the beamlets onto a surface of the target. The charged particle beam generator includes a charged particle source (3) for generating a diverging charged particle beam; a collimator system (5a,5b,5c,5d; 72;300) for refracting the diverging charged particle beam; and a cooling arrangement (203) for removing heat from the collimator system, the cooling arrangement comprising a body surrounding at least a portion of the collimator system. |
申请公布号 |
KR20150010993(A) |
申请公布日期 |
2015.01.29 |
申请号 |
KR20147035221 |
申请日期 |
2013.05.14 |
申请人 |
MAPPER LITHOGRAPHY IP B.V. |
发明人 |
VAN VEEN ALEXANDER HENDRIK VINCENT |
分类号 |
H01J37/09;H01J37/30;H01J37/317 |
主分类号 |
H01J37/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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