SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an art of manufacturing an insulation film excellent in film characteristics; provide an art of manufacturing a delicate and high-voltage insulation film; and provide an art of manufacturing an insulation film which causes less electron trap.SOLUTION: A semiconductor device manufacturing method comprises: forming an oxygen and hydrogen-containing first insulation film on a semiconductor film by using any of a CVD method, a sputtering method, and a thermal oxidation method; and reducing a hydrogen content in the first insulation film and reducing a film thickness of the semiconductor film by performing a plasma treatment on the first insulation film by using plasma excited by microwave in an oxygen and inert gas-containing atmosphere.