PATTERN FORMING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose peripheral areas are surrounded by the spacer film. Then, the core pattern and the embedded layer are removed simultaneously. Subsequently, using the spacer pattern as a mask, the hard mask layer and the process object are processed.

主权项

1. A pattern forming method, comprising:
forming a hard mask layer above a process object; forming a core pattern with a predetermined shape above the hard mask layer; forming a spacer film above the hard mask layer where the core pattern is formed; etch-backing the spacer film such that a top face of the core pattern is exposed and a top face of the hard mask layer between the core patterns is exposed; forming an embedded layer above the hard mask layer so as to embed between the core patterns whose peripheral areas are surrounded by the spacer film; removing the core pattern and the embedded layer simultaneously to form a spacer pattern including the spacer film; processing the hard mask layer using the spacer pattern as a mask; and forming a pattern on the process object using the processed hard mask layer as a mask.