DIFFERENTIAL CURRENT SENSING SCHEME FOR MAGNETIC RANDOM ACCESS MEMORY

摘要

A circuit for a differential current sensing scheme includes first and second cell segments, first and second reference cells, and first and second current sense amplifiers. The first and second reference cells are configured to store opposite logic values. The first and second current sense amplifiers are each configured with a first node and a second node for currents therethrough to be compared with each other. A cell of the first cell segment and a cell of the second cell segment are coupled to the first nodes of the first and second current sense amplifiers, respectively, and the first and second reference cells are coupled to both the second nodes of the first and second current sense amplifiers.

主权项

1. A circuit, comprising:
first and second cell segments; first and second reference cells configured to store opposite logic values, respectively; and first and second current sense amplifiers, each configured with a first node and a second node for currents therethrough to be compared with each other, wherein
a cell of the first cell segment and a cell of the second cell segment are coupled to the first nodes of the first and second current sense amplifiers, respectively, andthe first and second reference cells are coupled to both the second nodes of the first and second current sense amplifiers.