SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving a withstanding voltage with no increase in size, and to provide a method of manufacturing the semiconductor device.SOLUTION: The semiconductor device comprises: a semiconductor layer 10 having an upper surface 10a and an end surface 5c intersecting with the upper surface 10a; an upper electrode (source electrode 16) which is formed on the upper surface 10a and electrically connected to the semiconductor layer 10; and a protective film 1 extending from at least a part of the upper surface 10a onto at least a part of the end surface 5c.