发明名称 REDOX CAPACITOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a redox capacitor usable at room temperature, and to provide a method of manufacturing the redox capacitor.SOLUTION: An amorphous semiconductor containing hydrogen is employed as an electrolyte of a redox capacitor. The amorphous semiconductor containing hydrogen includes a semiconductor element, such as amorphous silicon, amorphous silicon germanium, or amorphous germanium. The amorphous semiconductor containing hydrogen, includes an oxide semiconductor containing hydrogen. The oxide semiconductor containing hydrogen, includes a single-component oxide semiconductor, such as zinc oxide, titanium oxide, nickel oxide, vanadium oxide, or indium oxide. The oxide semiconductor containing hydrogen, includes a multi-component oxide semiconductor including InMO(ZnO)(where m>0, and M is one metallic element or two or more metallic elements, selected from Al, Ga, Fe, Ni, Mn, and Co).</p>
申请公布号 JP2015019098(A) 申请公布日期 2015.01.29
申请号 JP20140182055 申请日期 2014.09.08
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KURIKI KAZUKI;OGINO KIYOFUMI;SAITO YUMIKO;SAKATA JUNICHIRO
分类号 H01G11/56;H01G9/00;H01G11/02;H01G11/46;H01G11/84;H01L21/822;H01L27/04 主分类号 H01G11/56
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